CMOS image sensor is a typical solid-state imaging sensor, usually composed of image sensitive cell array, row driver, column driver, timing control logic, AD converter, data bus output interface, control interface, etc. These parts are usually It is integrated on the same piece of silicon. The working process can be generally divided into reset, photoelectric conversion, integration, and reading. First, external light illuminates the pixel array, and a photoelectric effect occurs, generating a corresponding charge in the pixel unit. The row select logic unit gates the corresponding row pixel cells as needed. The image signals in the row pixel units are transmitted to the corresponding analog signal processing unit and the A/D converter through the signal bus of the respective column, and converted into digital image signal outputs. The row selection logic unit can scan the pixel array progressively or interlaced. The row selection logic unit and the column selection logic unit can implement the window extraction function of the image. The main function of the analog signal processing unit is to amplify the signal and improve the signal to noise ratio. In addition, in order to obtain a practical camera with good quality, various control circuits such as exposure time control, automatic gain control, etc. must be included in the chip. In order to operate each part of the circuit in a predetermined beat, a plurality of timing control signals must be used. In order to facilitate the application of the camera, the chip is also required to output some timing signals, such as a synchronization signal, a line start signal, a field start signal, and the like. Since the amplifier has amplification and buffering functions inside the pixel, it has a good noise canceling function, and the electric charge does not need to be remotely displaced to the output amplifier like the CCD device, thus avoiding the defects of all charge transfer related CCD devices. Two pixel structures of CMOS Since each amplifier is excited only during the readout period, the photoelectrically converted signal is amplified in the pixel and then read out by the X-Y address, which improves the sensitivity of the solid-state image sensor. The APS pixel unit has an amplifier, which is not limited by the charge transfer efficiency, and has a fast speed, and the image quality is significantly improved compared to the PPS. However, compared with PPS, APS has a larger pixel size and a smaller fill factor, and the designed fill factor is typically 0.2 to 0.3. Photodiode type passive pixel structure diagram An analog signal processing circuit, an I(2)C control interface, an exposure/white balance control, a video timing generation circuit, a digital conversion circuit, a row selection, a column selection and amplification, and a photosensitive cell array are integrated on the same chip. The analog signal processing circuit on the chip mainly performs Correlated Double Sampling (CDS) function. The A/D converter on the chip can be divided into pixel level, column level and chip level, that is, each pixel has an A/D converter, each column pixel has an A/D converter, or each The photosensitive array has an A/D converter. Due to the size limitation of the chip, the pixel-level A/D converter is not easy to implement. CMOS chip internal structure A series of control registers are provided inside the CMOS chip, and functions such as self-gain, auto-exposure, white balance, and correction are controlled by bus programming (such as Pc bus), which is simple in programming and flexible in control. The directly output digital image signal can be conveniently interfaced with subsequent processing circuitry for processing by the digital signal processor. Residual Current Circuit Breaker
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